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At high temperature, which outcome occurs because silicon carbide (SiC) crucibles degrade?

A)Increased graphitization induces structural weakening
B)Sublimation initiates grain boundary migration
C)Oxidation yields protective silicon dioxide
D)Formation energy destabilizes covalent network

💡 Explanation

The primary degradation mechanism is sublimation of SiC; rather than forming a strong protective layer. Sublimation causes direct material loss because vapor pressure increases the removal rate, therefore weakening the crucible, rather than oxidation.

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