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In a MOSFET-based amplifier circuit subjected to electrostatic discharge, which mechanism leads to gate oxide breakdown?

A)Dielectric runaway enhancement
B)Quantum tunneling disruption
C)Hot carrier injection
D)Channel length modulation setback

💡 Explanation

Dielectric runaway enhancement causes gate oxide breakdown; because electrostatic discharge generates high transient voltages exceeding the dielectric strength, leading to rapid current flow, therefore the gate oxide fails, rather than quantum effects or channel modulation being the primary cause under these conditions.

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