Which adverse outcome arises on semiconductor surfaces during pulsed laser annealing at excessive power?

💡 Explanation

Surface-wave formation appears because exceeding the ablation threshold induces rapid heating and material evaporation, leading to hydrodynamic instabilities initiating self-organized ripples aligned with the laser polarization direction. Therefore, ripples form rather than dopant segregation because the surface tension gradients dominate over diffusional processes here.

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