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← TechnologyWhich conduction failure may occur when excessive gate-source voltage endangers a MOSFET?
A)Gate-oxide dielectric breakdown✓
B)Channel length modulation appears
C)Early effect diminishes transconductance
D)Subthreshold leakage current stabilizes
💡 Explanation
Gate-oxide dielectric breakdown occurs with excessive gate-source voltage because the electric field exceeds the dielectric strength, therefore destroying the gate insulation, rather than inducing channel modulation phenomena.
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