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Which consequence escalates when exceeding the reverse breakdown voltage of a p-n junction diode under high-frequency switching?

A)Avalanche breakdown and thermal runaway
B)Increased forward current saturation
C)Enhanced charge carrier recombination
D)Reduced depletion region capacitance

💡 Explanation

Avalanche breakdown occurs because high reverse voltage accelerates electrons across the depletion region, impacting atoms, thereby rapidly increasing current; therefore, excess heat leads to thermal runaway and device destruction, rather than improved performance.

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