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Which consequence results regarding current flow, when the oxide layer thickness increases in a MOSFET?

A)Gate leakage current decreases rapidly
B)Electron mobility increases substantially
C)Subthreshold swing improves linearly
D)Saturation velocity increases non-linearly

💡 Explanation

Gate leakage current decreases rapidly because increased oxide thickness suppresses **quantum tunneling** through the insulator. Because the barrier width is increased, the probability of electrons traversing reduces exponentially, therefore decreasing leakage current via gate, rather than increasing mobility or velocity.

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