Which consequence results when a MOSFET's gate oxide layer dopants contaminate single crystal silicon source lattice?

💡 Explanation

Increased subthreshold leakage occurs because dopant migration causes localized disruptions to the crystal lattice. This lowers transistor threshold voltage because of increased surface states; therefore more devices conduct at incorrect levels, rather than thermal runaway.

• Which consequence results when a dielectric's breakdown strength is exceeded when hit with intense radio wave propagation?
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