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Which consequence results when a silicon MOSFET approaches its velocity saturation limit?

A)Drain current becomes independent of voltage
B)Gate oxide breakdown probability is reduced
C)Subthreshold leakage is significantly minimized
D)Channel length modulation is fully suppressed

💡 Explanation

As the carrier velocity nears its maximum limit, further increase in drain voltage does not raise the current because velocity saturation confines carriers. Therefore, current plateaus, rather than rising or altering gate behaviors, thus preventing oxide breakdown; suppression is insignificant.

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