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Which consequence results when an oxide layer is too thin?

A)Increased gate leakage current
B)Reduced transistor switching speed
C)Higher channel mobility observed
D)Lower subthreshold swing seen

💡 Explanation

A thin gate oxide causes increased gate leakage current because quantum tunneling allows electrons to pass through the insulating layer. This breakdown occurs because of Fowler-Nordheim tunneling, therefore, leakage increases, rather than improved mobility or subthreshold swing under normal operational conditions.

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