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Which consequence results when bias voltage narrows band bending?

A)Increased tunneling quantum yield
B)Decreased Schottky barrier height
C)Enhanced depletion layer capacitance
D)Reduced channel mobility magnitude

💡 Explanation

Increased quantum yield occurs because a smaller depletion region caused by band bending allows electrons to tunnel through via Fowler-Nordheim tunneling. Therefore, tunneling probability rises rather than the barrier's height decreasing because quantum tunnelling governs leakage here.

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