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Which consequence results when electron concentration exceeds gate oxide tolerance?

A)Capacitance threshold voltage shifts negatively
B)Substrate channel resistance decreases linearly
C)Gate-induced drain leakage diminishes rapidly
D)Interface trap density is maximally reduced

💡 Explanation

Electron injection into the gate oxide results from high concentration, because Fowler-Nordheim Tunneling allows electron transfer beyond the potential barrier, therefore the threshold电压 shifts due to induced charge, rather than the channel widening affecting resistance.

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