Which consequence results when electrons violate the potential barrier in MOSFET transistors?

💡 Explanation

Increased gate oxide leakage results from electrons tunneling through the insulating oxide layer because quantum tunneling permits propagation through classically forbidden regions; therefore, leakage increases rather than mobility enhancing or performance improving.

• Which phenomenon increases leakage current across capacitor dielectric under strong electric fields?
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• Which outcome limits sensor precision when electrons utilize a Single-Electron Transistor (SET)?
• Which outcome occurs because excess hydrogen accumulates in palladium?
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