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Which consequence results when excessive impurities decrease the band gap in silicon?

A)Increased reverse saturation current
B)Increased carrier recombination lifetime
C)Decreased electric field breakdown
D)Decreased gate oxide tunneling

💡 Explanation

Increased reverse saturation current dominates, because band gap narrowing facilitates electron-hole pair generation; therefore, this leakage increases rather than field breakdown or affecting carrier lifetimes because the mechanism is increased thermal carrier liberation across smaller barrier.

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