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← ScienceWhich consequence results when gate oxide breakdown occurs in flash memory?
A)Data retention becomes increasingly unreliable✓
B)Write speeds greatly increase linearly
C)Cell threshold voltage becomes stable
D)Erase cycles require less energy
💡 Explanation
When gate oxide breaks down, electrons tunnel through the damaged oxide layer, leading to charge leakage because of Fowler-Nordheim tunneling. Therefore, data retention degrades rather than improving threshold stability or write speeds, which require intact insulation.
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