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Which consequence results when impurity atoms distort band structure?

A)Increased free carrier concentration
B)Increased dielectric breakdown strength
C)Reduced thermal conductivity overall
D)Increased intrinsic carrier mobility

💡 Explanation

Increased free carrier concentration occurs because **electron doping**, resulting from impurities, shifts the Fermi level and alters band occupancy. Therefore, more charge carriers are available, rather than increased breakdown strength under strong electric fields.

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