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Which consequence results when MOSFET gate oxide fails?

A)Current leakage increases dramatically
B)Threshold voltage shifts minimally
C)Substrate conductivity improves significantly
D)Power efficiency increases substantially

💡 Explanation

A gate oxide failure causes a short circuit pathway between gate and channel because the dielectric properties are compromised and permit unwanted current flow, therefore leakage shoots up dramatically rather than any improvement; threshold effects may shift but increased bulk leakage dominates.

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