Which consequence results when oxides compromise transistor gate?

💡 Explanation

Increased gate leakage current occurs via quantum tunneling through the thin oxide layer due to defects. This lowers the transistor's efficiency because current flows without proper gate control, therefore reducing power. Channel mobility decreases from larger oxide defects rather than tunneling.

• Which consequence results when nuclear binding energy increases during iron-56 formation?
• Which outcome occurs when increased pressure distorts crystal phonon dispersion?
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• Which outcome results when exceeding the turbine blade's creep limit in a jet engine?
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