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Which consequence results when reverse bias increases in gallium nitride?

A)Increased Zener diode reverse current
B)Increased thermal runaway threshold
C)Decreased gate oxide breakdown voltage
D)Decreased electron mobility in channel

💡 Explanation

Increased reverse bias causes increased electric field, and at high fields, electron tunneling through bandgap leads to Zener breakdown because this quantum mechanical effect allows conduction. Therefore, reverse current increases rather than other secondary thermal effects or mobility changes.

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