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Which consequence results when strain accumulates during annealing of polysilicon?

A)Enhanced grain boundary dislocation formation
B)Decreased electron-phonon scattering rate
C)Increased intrinsic carrier concentration
D)Reduced impurity diffusion coefficient

💡 Explanation

Enhanced grain boundary dislocation formation occurs because strain promotes defects; this follows the mechanism of plastic deformation. Therefore, dislocations form to relieve stress, rather than a modification to carrier concentration which requires higher temperature exposure to dopants.

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