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← ScienceWhich consequence results when strain accumulates during annealing of polysilicon?
A)Enhanced grain boundary dislocation formation✓
B)Decreased electron-phonon scattering rate
C)Increased intrinsic carrier concentration
D)Reduced impurity diffusion coefficient
💡 Explanation
Enhanced grain boundary dislocation formation occurs because strain promotes defects; this follows the mechanism of plastic deformation. Therefore, dislocations form to relieve stress, rather than a modification to carrier concentration which requires higher temperature exposure to dopants.
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