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Which consequence results when the Fermi level shifts to a semiconductor band edge?

A)Increased free carrier concentration
B)Reduced electron-phonon scattering
C)Enhanced dielectric breakdown strength
D)Decreased Debye screening length

💡 Explanation

Increased free carrier concentration occurs because thermal excitation is now only required to overcome a very small energy for electrons to enter the conduction “band”. Therefore, ionization increases, rather than scattering decreasing, under higher doping condition.

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