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Which consequence results when thermally grown silicon dioxide insulator thickness decreases?

A)Increased gate leakage current
B)Reduced channel mobility
C)Increased threshold voltage
D)Reduced device breakdown voltage

💡 Explanation

A thinner oxide layer increases gate leakage current because quantum tunneling allows electrons to pass through the potential barrier, therefore current increases rather than mobility degradation or threshold voltage shifts that occur because of impurities.

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