Which consequence would appear if dopant concentration increases in transistors?

A)Source-drain leakage greatly increases✓

B)Operating frequency reaches maximum limit

C)Power amplification becomes optimally efficient

D)Thermal runaway protection improves greatly

💡 Explanation

Increasing the dopant concentration leads to a thinner potential barrier; thus, source-drain leakage increase via Quantum Tunneling, because electrons can tunnel through this barrier more easily. Therefore it increases rather than power amplification or improves thermal runaway protection.

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Which consequence would appear if dopant concentration increases in transistors?

💡 Explanation

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