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Which effect increases as semiconductor doping concentration approaches intrinsic carrier concentration?

A)Increased reverse saturation current
B)Reduced temperature coefficient of resistance
C)Higher electron-hole recombination rate
D)Stabilized band gap energy levels

💡 Explanation

As doping concentration nears the intrinsic carrier concentration, the mass action law dictates thermal equilibrium shifts, thus the dominant recombination mechanism occurs because of near equal electron and hole populations, increasing recombination rates. Therefore recombination rate rises, rather than stabilized energy, lower temperature coefficient or saturation current, all requiring strongly doped conditions.

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