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Which effect is exploited by magnetic RAM when writing data?

A)Spin-transfer torque switches magnetization
B)Giant magnetoresistance alters conduction
C)Proximity effect tunes conductivity
D)Spin Seebeck Effect generates voltage

💡 Explanation

Applying a sharply polarized current to a magnetic tunnel junction exploits spin-transfer torque because this creates magnetic switching to write the state. Consequently, magnetization flips, therefore data is stored reliably, rather than using external fields.

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