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← ScienceWhich effect on a gallium arsenide semiconductor results when impurities narrow the band gaps?
A)Increased electron-hole recombination rate✓
B)Enhanced phonon scattering efficiency
C)Increased material tensile strength
D)Reduced thermal expansion coefficient
💡 Explanation
Increased electron-hole recombination occurs because smaller band gaps enable electrons to cross the gap more easily via the Shockley-Read-Hall (SRH) recombination mechanism. Therefore, more electron-hole pairs recombine faster, rather than enhancing phonon scattering or affecting material strength.
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