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Which electrical outcome develops when doping introduces states within gallium arsenide's band?

A)Increased electron-hole recombination levels
B)Reduced dielectric breakdown resistance
C)Suppressed piezoelectric voltage generation
D)Enhanced phonon scattering intensity

💡 Explanation

Increased electron-hole recombination results because these new 'trap' energy states due to doping introduce energy levels in the band gap, which facilitate Shockley-Read-Hall recombination; therefore, recombination increases rather than phonon scattering because the created states act as mid-gap traps.

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