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← TechnologyWhich failure arises when an IGBT junction temperature exceeds limits?
A)Thermal runaway rapidly destroys device✓
B)Increased gate oxide layer breakdown
C)Collector current flow limit decreases
D)Reduced reverse recovery charge occurs
💡 Explanation
Thermal runaway arises because increased temperature raises the leakage current across the p-n junction, which further increases heat, therefore creating a positive feedback loop leading to device destruction, rather than stabilizing effects from decreased current flow.
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