Which failure develops when MOSFET hotspots exceed limits?

💡 Explanation

Thermal runaway induces gate rupture; the temperature increases channel conductivity and power dissipation, triggering further rise because positive feedback surpasses system cooling. Therefore, gate rupture follows, rather than merely slower switching or contact degradation. Electromigration causes slow degradation not sudden failure.

• Which outcome occurs when increased reverse bias degrades micro-LED array stability?
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• Which risk increases when setting concrete for reinforced concrete columns in freezing temperatures?
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