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← TechnologyWhich failure mechanism is accelerated when MOSFET gate width shrinks?
A)Hot carrier injection (HCI)✓
B)Latch-up susceptibility reduces
C)Channel length modulation diminishes
D)Subthreshold leakage decreases
💡 Explanation
Hot carrier injection (HCI) increases because the intense electric fields increase as MOSFET dimensions shrink; therefore more carriers gain enough energy to surmount the Si/SiO2 interface barrier, rather than staying in the channel region, causing Vth shifts.
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