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Which failure occurs when electron transport depends on tunneling through gate oxides?

A)Increased gate leakage current occurs
B)Reduced channel mobility is observed
C)Increased subthreshold swing ensues
D)Drain-induced barrier lowering dominates

💡 Explanation

Increased gate leakage happens because Field-assisted tunneling allows electrons to penetrate the thin oxide layer. Therefore, current increases, rather than mobility reducing or barrier lowering occuring which require different conditions in the semiconductor.

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