Which failure results when a MOSFET's gate oxide layer is stressed beyond design limits?

💡 Explanation

Threshold voltage shifts because trapped charges appear via Fowler-Nordheim tunneling through the oxide layer when subjected to fields beyond breakdown strength; therefore threshold voltage decreases, rather than other parameters altering because trapping dominates.

• Which outcome diminishes a fiber optic gyroscope's precision?
• Which consequence results when molecular packing increases within a crystal?
• Which outcome follows prolonged mechanical stress above yield strength within polycrystalline alloy?
• Which mechanism initiates epoxy thermoset polymer degradation under prolonged UV exposure?
• Which outcome occurs when an electron encounters grain boundaries within polycrystalline silicon used in solar panels?
• Which phenomenon allows stress mapping in polymers under load?