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Which limitation arises when optimizing gallium arsenide transistor speed?

A)Electron velocity saturates at high fields
B)Increased gate oxide tunneling occurs
C)Acoustic phonon scattering is amplified
D)Self-heating effects severely increase resistance

💡 Explanation

Velocity saturation limits transistor gain because above a critical electric field, the electron's drift velocity plateaus due to increased scattering, therefore transistor performance peaks there, rather than continuing to increase linearly as charge flow increases.

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