Which mechanism allows current flow in Flash memory floating gate transistors during cell programming?

💡 Explanation

During Flash memory cell programming when applying a high voltage, Fowler-Nordheim tunneling through the thin gate oxide occurs because electrons tunnel directly through the classically forbidden energy barrier to reach the floating gate. Therefore, Fowler-Nordheim tunneling allows charge storage, rather than thermionic emission, avalanche breakdown, or drift current which each require higher temperature or distinct voltage conditions.

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