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← ScienceWhich mechanism causes anisotropic etching rates in silicon crystal?
A)Surface energy minimization due to passivation✓
B)Ion implantation introducing new crystalline formations
C)Quantum tunneling creating electron pathways
D)Thermal expansion weakening grain boundaries
💡 Explanation
Surface energy minimization governs the etching rates because different crystal planes exhibit different surface energies; therefore, some planes etch faster than others due to varying reactivity, rather than defects or quantum effects which influence the bulk properties.
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