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Which mechanism causes current leakage when a reverse bias voltage increases across a semiconductor diode?

A)Quantum tunneling across depletion region
B)Increased electron-hole recombination rate
C)Impact ionization creates free carriers
D)Thermionic emission over potential barrier

💡 Explanation

Quantum tunneling through the potential barrier of the depletion region causes current leakage because electrons with sufficient energy have a finite possibility of tunneling, therefore leakage current increases rather than being blocked as intended.

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