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Which mechanism causes decreased electron mobility from grain boundaries in polycrystalline silicon solar cells?

A)Impurity segregation creating charged defects
B)Increased density of phonon scattering
C)Tunneling probability of electrons increases
D)Reduced overall material bandgap energy

💡 Explanation

Impurity segregation causes charged defects because impurities preferentially aggregate at grain boundaries within the crystal lattice, locally altering the electrostatic potential which impedes electron flow. Therefore mobility decreases, rather than phonon reduction or electron tunneling increases.

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