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← ScienceWhich mechanism causes electron avalanche when high reverse voltage is applied to semiconductor diode?
A)Impact ionization from accelerated electrons✓
B)Thermal generation exceeding depletion capacitance
C)Quantum tunneling through the barrier width
D)Surface leakage current exceeding bulk current
💡 Explanation
When high reverse voltage is applied, impact ionization occurs because accelerated electrons gain sufficient energy to collide with atoms, freeing more electrons by breaking covalent bonds, leading avalanche multiplication. Therefore, impact ionization is the correct answer, rather than thermal generation, tunneling, or surface leakage, which have different root causes and dependencies.
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