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Which mechanism causes electron mobility saturation within gallium nitride crystals?

A)Interband deformation potential scattering
B)Surface recombination velocity increase
C)Impurity induced channel pinch-off
D)Polar optical phonon scattering

💡 Explanation

The electrons interact strongly with lattice vibrations, causing polar optical phonon scattering because GaN is a highly polar material. Channel electron mobility saturates above a critical electric field, therefore, velocities are capped rather than being limited by impurity scattering at normal carrier densities.

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