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Which mechanism causes increased electrical resistance in a doped semiconductor when heated?

A)Increased phonon scattering blocks carrier flow
B)Fermi level shifts to band edge
C)Increased electron-hole recombination increases conductivity
D)Dopant atoms saturate available energy bands

💡 Explanation

Increased temperature causes increased phonon scattering, impeding electron flow because lattice vibrations disrupt the electronic band structure. Therefore, resistance increases rather than decreases because carrier mobility is suppressed; other options propose differing behaviors.

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