Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter ArenaQuestion
← ScienceWhich mechanism causes increased electrical resistance in polycrystalline silicon microbeams under significant tensile stress?
A)Peierls stress overcoming lattice resistance
B)Piezoresistivity altering band structure✓
C)Zener breakdown forming conductive paths
D)Hall effect generating opposing voltage
💡 Explanation
Piezoresistivity, where mechanical stress alters the material’s band structure and carrier mobility, causes increased resistance because the tensile stress modifies the band gap and scattering rates; therefore resistance rises, rather than a conductive path forming.
🏆 Up to £1,000 monthly prize pool
Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.
Related Questions
Browse Science →- Which distortion results when atmospheric thermal gradients reduce coherence?
- Which relativistic effect results when gravitational acceleration mimics inertial acceleration?
- Which outcome results when insufficient cooling occurs within a gas turbine combustor?
- Which outcome occurs when sudden decompression initiates water phase transition?
- Which property change occurs when thermal energy overcomes intermolecular forces in a liquid polymer?
- Which consequence results when impurities distort a semiconductor's band structure?
