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Which mechanism causes increased magnetoresistance sensitivity in a Permalloy crystal?

A)Spin-orbit coupling
B)Defect electron tunneling
C)Grain boundary scattering
D)Quantum Hall mobility

💡 Explanation

Grain boundary scattering increases with finer crystal grain size, altering the magnetic domain alignment through increased scattering. Therefore, this enhances resistivity changes under an applied magnetic field rather than by spin-orbit effects, because resistivity changes relate mainly to grain impedance.

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