Which mechanism causes increased resistance when a crystal of gallium arsenide is subjected to intense strain?

💡 Explanation

Increased strain raises the density of crystal defects, promoting phonon scattering; this impedes electron flow and increases resistance, because electrons collide more frequently with vibrating lattice atoms. Therefore, resistance rises due to phonon scattering rather than direct band gap changes.

• Which factor primarily dictates the melting point of ionic compounds found within rock salt deposits?
• Which consequence occurs when exceeding design velocities in a Venturi meter?
• Which risk increases when elevated temperatures break intermolecular forces in lubricating oil?
• Which outcome occurs when an electron orbital function overlaps?
• Which consequence prevails when high temperature weakens epoxy bonds in composite wing structures?
• Which effect results when a black hole's extreme curvature exceeds Schwarzschild radius constraints?