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← ScienceWhich mechanism causes rapid transistor failure during electrostatic discharge?
A)Impact ionization creates avalanche breakdown✓
B)Capacitive coupling induces substrate latchup
C)Thermal expansion increases channel resistance
D)Quantum tunneling bypasses gate insulation
💡 Explanation
Impact ionization during electrostatic discharge generates electron-hole pairs, forming a positive feedback loop which causes avalanche breakdown because high-energy carriers collide with silicon atoms. Therefore, the transistor fails due to excessive current, rather than latchup or quantum effects.
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