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Which mechanism disrupts integrated circuit function during electrostatic discharge?

A)Dielectric breakdown across gate oxide
B)Electromigration in metallic interconnects
C)Channeling in the silicon lattice
D)Latch-up occurrence in bulk CMOS

💡 Explanation

Electrostatic discharge introduces high energy ions in the crystal lattice which initiates channeling mechanism, causing unpredictable doping profiles and thus short circuits; therefore lattice damage results rather than dielectric damage or latch-up which involves different structures on longer timescales.

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