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Which mechanism hinders electron ballistic transport when a nanoscale transistor's channel length increases?

A)Increased electron-phonon scattering
B)Enhanced velocity overshoot
C)Reduced quantum confinement effects
D)Elevated source-drain tunneling rate

💡 Explanation

Increased channel length raises the probability of electron-phonon scattering which degrades ballistic transport causing momentum relaxation; therefore, electrons scatter more frequently, rather than maintain lossless travel because other transport effects diminish in prominence.

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