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Which mechanism increases in polycrystalline silicon solar cells due to grain boundaries?

A)Electron-hole recombination rate
B)Width of the band gap
C)Density of phonon scattering
D)Intensity of plasmon resonance

💡 Explanation

Increased grain boundaries in crystals cause higher electron-hole recombination because imperfections act as traps that promote undesirable recombination events; therefore efficiency drops due recombination rate rather than phonon scattering that reduces carrier mobility if boundaries are aligned.

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