Which mechanism leads to transistor saturation at high gate voltages?

A)Channel inversion layer formation failure

B)Drift velocity saturation✓

C)Gate oxide dielectric breakdown

D)Source/drain junction depletion capacitance

💡 Explanation

Drift velocity saturation causes transistor saturation because increasing the gate voltage further doesn't increase the drain current; therefore, current plateaus, rather than continues to increase, because the charge carriers cannot move any faster.

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Which mechanism leads to transistor saturation at high gate voltages?

💡 Explanation

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