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Which mechanism limits bit density increases in DRAM?

A)Inter-cell capacitive interference
B)Threshold voltage instability
C)Quantum tunneling leakage
D)Electromigration induced resistance

💡 Explanation

Inter-cell coupling increases bit errors because capacitive interference injects noise, falsely triggering cells near the switching cell. Therefore, cells cannot shrink indefinitely due to increased interference, rather than threshold shifts or electromigration, which cause different kinds of failures.

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