Which mechanism limits current flow through nanoscale flash memory transistors during programming when oxide thickness is reduced?

💡 Explanation

When oxide thickness is reduced in nanoscale flash memory, quantum tunneling of electrons through the insulating layer becomes more probable according to quantum mechanics, leading to increased leakage and difficulty maintaining charge. Therefore electron tunneling limits current flow, rather than resistance increase, scattering or lattice vibrations which are less dominant at these scales.

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