Which mechanism limits electron mobility in a semiconductor's inversion layer at cryogenic temperatures?

💡 Explanation

When cryogenic temperatures are reached, phonon scattering is minimized, but interface roughness scattering dominates electron mobility because quantum confinement creates subbands where electrons interact with imperfections. Therefore, interface roughness becomes the main limitation, rather than phonon or impurity scattering, which are less influential, or Landau level effects which require strong magnetic fields.

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